SSF2301 20v p-channel mosfet www.goodark.com page 1 of 7 rev.2.1 main product characteristics v dss -20v r ds (on) 60m (typ.) i d -3a features and benefits description absolute max rating @t a =25 unless otherwise specified symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v -3 i d @ tc = 70c continuous drain current, v gs @ 10v -1.8 i dm pulsed drain current -10 a p d @tc = 25c power dissipation 1.25 w v ds drain-source voltage -20 v v gs gate-to-source voltage 12 v t j t stg operating junction and storage temperature range -55 to +150 c thermal resistance symbol characteristics typ. max. units r ja junction-to-ambient (t 10s) 100 c /w marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. sot-23 d g s
SSF2301 20v p-channel mosfet www.goodark.com page 2 of 7 rev.2.1 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 v v gs = 0v, i d = -250a 60 90 v gs =-4.5v,i d = -3a r ds(on) static drain-to-source on-resistance 85 115 m v gs =-2.5v,i d = -2a -0.5 -1 v ds = v gs , i d = -250a v gs(th) gate threshold voltage -0.58 v t j = 125c -1 v ds = -20v,v gs = 0v i dss drain-to-source leakage current -50 a t j = 125c 100 v gs =12v i gss gate-to-source forward leakage -100 na v gs = -12v q g total gate charge 9.6 q gs gate-to-source charge 1.1 q gd gate-to-drain("miller") charge 2.6 nc i d = -3a, v ds =-10v, v gs = -4.5v t d(on) turn-on delay time 9.7 t r rise time 18 t d(off) turn-off delay time 25 t f fall time 31 ns v gs =-4.5v, v ds =-20v, r gen =3 c iss input capacitance 490 c oss output capacitance 75 c rss reverse transfer capacitance 60 pf v gs = 0v, v ds =-10v, ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) -3 a i sm pulsed source current (body diode) -10 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage -0.83 -1.2 v i s =-0.75a, v gs =0v
SSF2301 20v p-channel mosfet www.goodark.com page 3 of 7 rev.2.1 test circuits and waveforms switch waveforms: notes: calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c gate charge test circuit: switching time test circuit: eas test circuit:
SSF2301 20v p-channel mosfet www.goodark.com page 4 of 7 rev.2.1 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
SSF2301 20v p-channel mosfet www.goodark.com page 5 of 7 rev.2.1 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6. typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance junction-to-case
SSF2301 20v p-channel mosfet www.goodark.com page 6 of 7 rev.2.1 mechanical data min max m in max a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 0 8 0 0 0 8 0 symbol dimension in m illimeters dimension in inches 0.95typ 0.037t yp 0.55ref 0.022ref sot-23 package outline dimension
SSF2301 20v p-channel mosfet www.goodark.com page 7 of 7 rev.2.1 ordering and marking information device marking: 2301 package (available) sot23 operating temperature range c : -55 to 150 oc devices per unit package type units/ tape tapes/inner box units/inner box inner boxes/carton box units/carton box sot23 3000 10 30000 4 120000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) tj=125 to 150 @ 80% of max v dss /v ces /v r 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) tj=150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
|
